High-contrast quantum magnetometers

Designing the next generation of quantum sensors.

Spin defects in 2D materials offer unmatched platforms for developing quantum sensors for ultra fine electromagnetic fields and atomic-scale strains.

Problem

Discovering new defects for sensing applications is a significant challenge. Experimentally testing every possible defect across various host materials is infeasible, and current classical computational methods for identifying defects with optically-detected magnetic resonance (ODMR) contrast — a key condition for designing quantum sensors — are largely limited.

Solution

We developed a quantum algorithm to accurately simulate intersystem crossing rates between the defect excited states. Intersystem crossing rates are the key property needed to identify ODMR-active defect-host candidates for quantum sensing.

We expect this quantum algorithm to help in the discovery of promising spin defects for sensing applications, allowing researchers to go beyond today's limits in precision EM field measurement.